ShaneLogic
112 verified skills112 total stars
academic-citation-formatting
Format academic citations for journal articles, books, conference proceedings, and other scientific references according to standard bibliographic conventions used in physics and materials science literature
development1
Amorphous Silicon Characterization
Determine optical band gap and band tail characteristics in amorphous silicon and its alloys using Tauc plot, E04 method, and mobility edge analysis. Use when characterizing a-Si:H materials, analyzing Urbach tails, or determining electronic structure parameters for amorphous semiconductor devices.
development1
anode-adjacent-domain-analysis
Analyze and characterize anode-adjacent high-field domains in CdS crystals and solar cells. Use this skill when investigating high-bias semiconductor behavior, junction leakage problems in CdS/CdTe/CIS solar cells, or when current-voltage characteristics show pre-breakdown stabilization. Triggers on mentions of domain formation, singular points in field analysis, or solar cell junction optimization.
development1
asymmetric-generation-analysis
Analyze the effects of asymmetric optical generation rates in pn-junction devices. Use this skill when generation rates differ between device regions (e.g., g1,o ≠ g2,o) in devices with non-uniform illumination or spatially varying optical generation. This skill helps quantify Voc reduction, junction field changes, and interpret non-ideal behavior using the diode quality factor (A-factor).
development1
asymptotic-model-simplification
Simplify the recombination model configuration to enable direct comparison between numerical simulations and asymptotic analytic solutions. Use this when validating numerical models against analytic results in carrier transport problems, specifically for methylammonium lead tri-iodide or similar materials where monomolecular recombination approximations apply.
testing1
auger-recombination-via-centers
Calculate Auger recombination lifetime and capture cross-section when carriers recombine through defect centers under high excitation conditions. Use this when analyzing recombination in materials with significant defect densities or high carrier injection levels where Auger processes via recombination centers dominate.
testing1
boundary-conditions-and-non-dimensionalisation
Define boundary conditions for PDE drift-diffusion models and perform non-dimensionalisation of variables for numerical stability. Use when setting up the solution space, scaling variables for numerical solution, or establishing initial/boundary conditions for ion vacancy and charge carrier transport models.
data-ai1
carrier-lifetime-calculation
Calculate minority carrier lifetimes using SRH recombination model and understand their spatial distribution in semiconductor devices with pn-junctions. Use when analyzing recombination rates, carrier lifetime in bulk materials, or lifetime variation across device junctions.
development1
carrier-transport-scattering-analysis
Analyze carrier transport behavior in semiconductors including gas-kinetic scattering models, momentum relaxation, and energy relaxation. Use when calculating mobility, mean free path, scattering times, or understanding how carriers lose momentum and energy to the lattice.
data-ai1
cds-cdte-high-field-domain-analysis
Analyze the high field domain mechanism that explains efficiency improvements in CdS/CdTe heterojunction solar cells when a thin CdS layer is present. Use when investigating why CdS layers improve open circuit voltage (Voc) and reduce junction leakage in CdTe solar cells, or when modeling I-V characteristics of CdS/CdTe junctions.
testing1
cdte-cell-degradation-analysis
Diagnose and manage degradation in CdS/CdTe solar cells under stress conditions. Use when evaluating CdTe cell stability, diagnosing Voc loss, analyzing back contact issues, planning accelerated lifetime testing, or investigating copper-related degradation in CdTe devices.
development1
cdte-layer-properties
Use when characterizing, modeling, or analyzing CdTe absorber layer properties in thin-film solar cells (CdS/CdTe heterojunctions). Provides physical parameters including electrical conductivity, carrier mobilities, effective masses, bandgap, dielectric constants, and layer specifications for device modeling and characterization tasks.
development1
cdte-solar-cell-back-contact
Configure and process back electrodes for CdS/CdTe solar cells. Use this skill when fabricating back contacts, optimizing copper layer thickness, selecting between dry/wet processing methods, or performing pre-contact annealing for CdS/CdTe solar cell structures.
tools1
chebfun-calculus-operations
Compute derivatives of chebfun objects using continuous finite differences, and apply non-smooth operations (abs, min, max, sign, round, floor, ceil) that introduce breakpoints at zeros or transitions. Use when you need to differentiate functions, handle functions with discontinuities, or create piecewise-defined functions from smooth components.
tools1
chebfun-statistical-analysis
Compute statistical measures including 2-norm, mean, standard deviation, and variance for chebfun objects. Use when you need to analyze the statistical properties of functions defined over intervals, compute function norms, or perform quantitative analysis of continuous data.
development1
chebyshev-barycentric-interpolation
Evaluate Chebyshev polynomial interpolants using the barycentric formula, which provides stable and efficient computation of polynomial values at arbitrary points. Use when you need to evaluate Chebyshev interpolants, understand the underlying interpolation algorithm, or implement custom polynomial interpolation.
development1
CIGS-CdS Heterojunction Formation and Analysis
Form and analyze Cu(InGa)Se2/CdS heterojunctions for thin-film solar cells. Use when designing junction structures, depositing CdS buffer layers, evaluating band alignment effects on carrier collection, or troubleshooting low Jsc/FF in CIGS devices.
development1
cigs-recombination-voc-analysis
Determine recombination mechanisms and theoretical Voc limits for Cu(InGa)Se2/CdS solar cells using diode equation analysis, ideality factors, and barrier height measurements. Use this when fitting diode curves, determining voltage limitations, or investigating performance bottlenecks.
testing1
complex-refractive-index-relations
Convert between complex dielectric function components (ε₁, ε₂) and optical constants (refractive index nᵣ, extinction coefficient κ) for absorbing media. Use when analyzing optical properties of semiconductors or materials with absorption/damping.
testing1
constant-energy-surfaces-brillouin-zone
Construct and interpret constant energy surfaces within Brillouin zones to analyze semiconductor band structure, visualize electron behavior near band edges, and determine effective mass. Use when analyzing E(k) dispersion relations, determining effective mass tensors, or visualizing how lattice potential influences electron states.
tools1
copper-doping-optimization-cds-field-quenching
Optimize copper doping concentration in CdS layers to achieve efficient field quenching at ~50 kV/cm. Use when designing or analyzing CdS-based solar cells where field quenching efficiency is critical for performance, or when troubleshooting inefficient field quenching in semiconductor devices.
development1
critical-thickness-superlattices
Determine if layer thickness is safe for ultrathin superlattice formation when depositing alternating layers with substantial lattice mismatch. Use when designing heteroepitaxial structures, superlattices, or quantum wells where preventing dislocation formation is critical for material quality.
development1
cuinse2-device-fabrication
Apply validated deposition methods and layer stack construction techniques for CuInSe2/CIGS thin-film solar cell fabrication. Use when fabricating, designing, or troubleshooting CuInSe2-based photovoltaic devices, selecting between co-evaporation and precursor reaction methods, or optimizing device layer architecture.
development1
dangling-bond-defect-characterization
Characterize D-centers (dangling bond defects) in undoped or intrinsic amorphous silicon (a-Si:H) when analyzing defect states, energy levels, charge states, and correlation energy. Use this skill when working with electron spin resonance (ESR) measurements, infrared absorption data, or investigating defect physics in a-Si:H materials.
devops1
demarcation-line-trap-classification
Classify localized states in semiconductor band gaps as electron traps, hole traps, or recombination centers by calculating demarcation lines based on quasi-Fermi levels, capture cross-sections, and temperature. Use this skill when analyzing trap behavior, determining recombination efficiency, or characterizing defect states in semiconductor materials.
testing1
depletion-width-collection-model
Calculate voltage-dependent collection efficiency in pn-junction solar cells using depletion width modeling. Use when modeling carrier collection in pn-homojunction or CdTe-based solar cells where material parameters (acceptor density, built-in potential, absorption coefficient, diffusion length) are known or can be approximated.
testing1
domain-field-determination-voltage-width
Determine electric field strength in stationary high-field domains in CdS by measuring domain width versus applied voltage. Use when you have optically observable stationary domains and need to calculate the constant field strength within the domain.
data-ai1
doping-superlattice-design
Design and configure doping superlattices (n-i-p-i structures) using periodic doping variations in semiconductor materials. Use when constructing superlattices through doping modulation rather than composition changes, particularly when determining lattice constants and miniband characteristics for GaAs, Si, InP, or similar semiconductors.
content-media1
drift-diffusion-current-analysis
Analyze and calculate drift and diffusion current components in semiconductor junctions. Use this skill when examining individual current mechanisms in bulk semiconductor regions or at junction interfaces, particularly when distinguishing between field-driven drift current and gradient-driven diffusion current.
research1
carrier-recombination-trapping
Analyze carrier recombination and trapping mechanisms in semiconductors. Use when calculating carrier lifetimes, determining recombination currents, analyzing defect states and trap behavior, or evaluating how excess carriers return to thermal equilibrium.
tools1
3D Lattice Tunneling
Calculate electron transmission probability through planar barriers in 3D crystals by applying momentum conservation principles. Use when analyzing tunneling in three-dimensional lattices, when perpendicular momentum conservation must be accounted for, or when converting 1D tunneling results to 3D scenarios involving crystal structures.
testing1
acoustic-phonon-scattering-mobility
Calculate electron mobility limited by acoustic phonon scattering in direct bandgap semiconductors and determine directional elastic constants. Use when analyzing temperature-dependent mobility, phonon scattering effects, or elastic properties in specific crystallographic directions.
testing1
advanced-deposition-techniques
Select and execute high-rate deposition techniques (VHF-PECVD, HWCVD, MW-CVD) for nanocrystalline silicon growth when standard RF-PECVD rates are insufficient or improved material properties are required. Use when deposition rates >10 Å/s are needed, when reducing hydrogen content is critical, or when improving stability against light-induced degradation is a priority.
testing1
advanced-transport-modeling
Configure and apply advanced transport model features including quasi-Fermi level input handling and steric effects in ion transport. Use when modeling high ion vacancy densities, enabling non-Boltzmann statistics, or setting flexible doping parameters for transport layers.
data-ai1
amorphous-silicon-voc-bandgap-relationship
Calculate the theoretical open-circuit voltage limit for amorphous silicon and nanocrystalline silicon solar cells based on bandgap energy and material-specific voltage deficit factors. Use this when estimating maximum Voc potential or comparing different materials.
testing1
analyze-abrupt-step-junctions
Use this skill when analyzing the electrical behavior of one-carrier abrupt step-junctions, such as nn+-junctions or semiconductor barriers. It applies when you need to model the physics of these junctions using governing transport and Poisson equations to determine electron density, electric field, and potential distributions.
development1
anisotropic-mobility-calculation
Calculate direction-dependent mobility in anisotropic semiconductors (Ge, Si) accounting for band structure anisotropy and ionized impurity scattering effects. Use when working with multi-valley semiconductors with ellipsoidal constant energy surfaces or when anisotropy corrections to standard ionized impurity scattering models are required.
data-ai1
asi-staebler-wronski-analysis
Analyze and mitigate Staebler-Wronski effect degradation in amorphous silicon (a-Si:H) solar cells. Use when predicting efficiency loss in a-Si cells, planning annealing recovery, comparing single-junction vs. multijunction degradation, or evaluating long-term outdoor performance of a-Si devices.
development1
Asymmetric PN Junction Analysis
Analyze electric field distribution, carrier dynamics, and voltage behavior in asymmetrically doped pn-junctions. Use when modeling thin or thick Si solar cells with unequal doping profiles, calculating field profiles, predicting Voc changes, or interpreting recombination effects in junctions with doping asymmetry.
data-ai1
auger-recombination-modeling
Calculate Auger recombination rates and incorporate into bulk recombination models for perovskite solar cells. Use when simulating high carrier density conditions, analyzing high-injection regimes, or requiring accurate recombination modeling beyond SRH and radiative mechanisms.
data-ai1
Bias-Dependent Recombination Analysis
Interpret recombination behavior in pn-junctions under different bias conditions. Use when analyzing net recombination vs. generation, determining carrier traffic direction, or understanding space charge region behavior under forward or reverse bias.
research1
bibliography-organization
Organize and sort bibliographic entries alphabetically by author surname, handle multiple works by same author with chronological sorting and letter suffixes
tools1
bibliography-topic-classification
Classifies research citations and journal names into domain categories (Photovoltaics, Semiconductor Physics, Surface Science, Materials Science). Use when analyzing bibliography subject matter, performing topic modeling on citation lists, determining research focus from references, or conducting bibliometric domain analysis.
development1
boundary-conditions-drift-diffusion
Apply appropriate boundary conditions for drift-diffusion simulations, specifically Dirichlet conditions for infinite ion reservoirs at system boundaries.
testing1
capture-cross-section-deep-centers
Calculate capture cross-section pre-exponential factors for deep centers in semiconductors, including thermal activation corrections. Use when analyzing carrier capture by deep traps where thermal energy effects are significant.
tools1
carrier-statistics-modeling
Apply appropriate statistical models (Boltzmann, Fermi-Dirac, Gaussian) to calculate carrier densities and current densities in semiconductor materials. Use when simulating charge transport in perovskite solar cells, modeling transport layers (ETL/HTL), or working with organic vs inorganic materials where non-Boltzmann statistics may be required.
data-ai1
carrier-transport-mechanics
Analyze and calculate carrier transport properties in semiconductors including thermal velocity, drift velocity, conductivity, and mobility. Use this when analyzing carrier motion, current flow, or transport parameters under thermal equilibrium or with applied electric fields.
testing1
cds-cdte-commercial-viability
Use this skill when evaluating CdS/CdTe solar technology for commercial deployment, comparing with other photovoltaic technologies, or assessing market viability.
testing1
cds-cdte-field-quenching-analysis
Analyze field quenching effects in CdS/CdTe junctions to understand domain formation, leakage suppression, and negative differential conductivity. Use when investigating CdS/CdTe solar cell behavior under varying bias voltages, particularly near open circuit voltage (Voc), or when analyzing junction leakage and high-field domain phenomena.
development1
CdS/CdTe Heterojunction Analysis
Analyze electric field distribution, field quenching mechanisms, and photoconductivity effects in CdS/CdTe heterojunction solar cells. Use when modeling CdS-based junctions, understanding field-dependent carrier behavior, or analyzing copper-doped CdS performance under optical excitation.
testing1
cds-cdte-model-selection
Select and apply appropriate models (IFC, n-p, or n-i-p) for analyzing CdS/CdTe thin-film heterojunction solar cell current-voltage characteristics. Use when analyzing collection efficiency curves from I-V measurements, comparing model fits, characterizing cell performance parameters, or investigating degradation behavior in CdS/CdTe cells.
testing1
cds-cdte-solar-cell-design
Configure and analyze CdS/CdTe thin-film solar cell structures in superstrate configuration. Use when designing, evaluating, or troubleshooting CdS/CdTe polycrystalline thin-film solar cells with conducting glass substrates.
content-media1
cds-cdte-solar-cell-fabrication
Use this skill when manufacturing CdS/CdTe thin-film solar cells. It covers the complete fabrication process including substrate preparation, CdS and CdTe deposition via evaporation, contact formation, and the critical CdCl2 heat treatment step for crystallization and doping.
development1
cds-layer-deposition-optimization
Optimize CdS window layer deposition and thickness for CdS/CdTe solar cells. Use when designing or fabricating CdS/CdTe cells to balance Voc and jsc trade-offs.
content-media1
cdte-utility-scale-benchmarking
Benchmark CdTe (Cadmium Telluride) utility-scale solar projects against historical deployment metrics, pricing benchmarks, and PPA rates. Use this skill when analyzing or comparing CdTe utility project costs, evaluating project feasibility, or establishing baseline pricing for CdS/CdTe technology deployments.
tools1
chalcogen-impurities-silicon
Analyze energy levels, state splitting, and pair formation properties of Group VI elements (O, S, Se, Te) in silicon. Use when calculating donor energy levels for chalcogen impurities, analyzing deep centers, or investigating chalcogen pair behavior and symmetry.
development1
chalcopyrite-absorber-selection
Select appropriate wide-band-gap chalcopyrite absorber materials for thin-film solar cells based on band-gap requirements. Use when designing single-junction or tandem solar cells, comparing Cu-based and Ag-based chalcopyrite compounds, or determining material suitability for specific Eg values.
testing1
chebfun2-bibliographic-citation
Extract and format bibliographic citations for Chebfun2 integration methods, specifically the hybrid symbolic-numeric integration paper by Carvajal, Chapman, and Geddes (2008). Use when referencing source material for Chebfun2 integration methods, working with academic references on numerical integration, or citing tensor-product series approaches.
development1
chebfun-analysis
Compute global extrema (minimum and maximum values) and vector norms (1-norm and infinity-norm) of chebfun objects. Use when analyzing the behavior, bounds, or magnitude of functions represented as chebfuns.
data-ai1
chebfun-integration-quadrature
Compute definite integrals of chebfun objects using FFT-based Clenshaw-Curtis quadrature, handle 2D integration over rectangular domains, and apply specialized quadrature rules (Gauss, Gauss-Jacobi) for high-precision numerical integration. Use when you need to integrate smooth functions, handle piecewise smooth integrands, or work with orthogonal polynomial quadrature nodes and weights.
development1
chebfun-operations
Perform mathematical operations on chebfuns including integration, differentiation, and other calculus operations. Use when computing integrals, derivatives, or applying functions to chebfuns.
tools1
chebfun-resolution-strategies
Configure sampling, splitting, and resolution preferences for chebfuns. Use when constructing chebfuns for functions with varying complexity, spikes, or piecewise smooth behavior.
tools1
chebfun-root-finding-extrema
Find all zeros (roots) of a chebfun object using the Boyd-Battles method, and identify local minima and maxima without explicitly computing derivatives. Use when you need to locate all function zeros in a domain, find intersections of curves, or identify local extrema of smooth and non-smooth functions.
testing1
chebop-eigenvalue-problems
Compute eigenvalues and eigenfunctions for linear differential operators, integral operators, and generalized eigenvalue systems using the overloaded eigs command. Handle systems of coupled ODEs using block operators. Use when solving spectral problems for differential equations, finding eigenmodes of operators, or working with coupled variable systems.
tools1
cigs-bandgap-engineering
Determine optimal Ga content and bandgap configuration for Cu(In,Ga)Se2 (CIGS) solar cells based on application requirements. Use when designing CIGS cells for standard efficiency, high-temperature environments, or tandem/multi-junction structures.
testing1
cigs-material-composition-engineering
Use this skill when engineering Cu(InGa)Se2 material properties, optimizing composition for device performance, or analyzing defect physics. Covers bandgap engineering, composition tolerance, and intrinsic defects.
development1
cigs-quantum-efficiency-analysis
Calculate external and internal quantum efficiency for Cu(InGa)Se2 solar cells and analyze optical and collection losses (shading, reflection, absorption, collection efficiency) to determine short-circuit current limitations. Use this when analyzing device performance, calculating Jsc, or investigating current losses.
development1
citation-format-parsing
Parse academic citation strings to identify source type (book, journal article, book chapter, or conference paper) and extract structured metadata including authors, title, and publication details. Use when analyzing reference lists, building bibliographies, extracting publication information from citation text, or converting unstructured citations to structured format.
development1
complex-contour-integration
Compute contour integrals of complex functions along parameterized paths in the complex plane. Apply Cauchy's theorem for analytic functions and the residue theorem for meromorphic functions. Use when integrating complex functions along specific paths or around closed contours.
testing1
complex-zero-pole-analysis
Count zeros and poles of complex functions within closed regions using the argument principle, and locate specific zeros using Cauchy integrals. Use when analyzing the distribution of roots or finding precise locations of zeros in the complex plane.
testing1
computational-material-analysis
Use this skill when designing new heterojunction solar cells, searching for optimal material combinations, or predicting properties of unsynthesized compounds. Leverages supercomputers for large-scale comparative analysis.
data-ai1
computational-software-environment-setup
Configure a MATLAB-based computational environment with multiprecision computing capabilities for mathematical modeling, numerical analysis, and perovskite solar cell simulations. Use when reproducing study results from 2017-2018 research or setting up equivalent computational environments with specific software versions.
testing1
conference-proceeding-citation
Format bibliographic citations for papers presented at conferences and published in proceedings. Use when the entry contains "in *Proc.*" or conference name keywords, followed by year and page numbers.
development1
Crystallographic Symmetry Notation
Decode and interpret Hermann-Mauguin symmetry notation for crystallographic point groups and space groups. Use this skill when encountering symmetry symbols like '4/m', '3m', or '6/mmm' and needing to identify the rotational axes, mirror planes, and inversion centers they represent.
development1
cuinse2-cigs-material-properties
Calculate material properties, doping behavior, and band gap energy for CuInSe2, CuGaSe2, and Cu(InGa)Se2 chalcopyrite semiconductors. Use when determining conductivity type from composition/annealing conditions or computing band gap for alloy compositions.
testing1
dae-solver-configuration-matlab
Configure MATLAB's ode15s solver for time evolution simulation of discretized DAE systems. Use when you have a discretized system of equations from finite element or finite difference methods and need to perform time-dependent simulations with adaptive step size control and error tolerance specification.
testing1
deep-center-recombination-analysis
Analyze recombination mechanisms at deep centers using configuration coordinate diagrams. Use when determining whether recombination is radiative or nonradiative, calculating temperature-dependent capture cross sections, or evaluating electron-lattice coupling strength.
research1
deep-level-formation-analysis
Predicts energy level positions and character (deep, shallow, or resonant) of defect centers in semiconductors. Use when modeling substitutional impurities, analyzing vacancy-related defects, determining whether impurity-induced states are deep (vacancy-like) or shallow (hydrogen-like), or predicting charge density distributions around defect sites in compound semiconductors.
development1
deep-trap-phosphor-dosimetry
Measure radiation dosage using phosphor materials with deep electron traps. Use this skill when working with thermoluminescent dosimeters (TLDs) like CaF:Mn, when you need to quantify radiation exposure through glow curve analysis, or when analyzing materials that store trapped electrons for long-term dosimetry.
research1
differential-equation-solver
Solve linear and nonlinear differential equations using chebops. Use when solving boundary value problems, ODEs, integral equations, or PDEs with spectral methods.
tools1
dislocation-dynamics-analysis
Analyze dislocation motion types, velocity factors, and generation mechanisms in crystals under stress. Use when analyzing crystal deformation, predicting dislocation behavior, determining plastic deformation mechanisms, or evaluating dislocation mobility in materials science and solid-state physics contexts.
development1
Doped Semiconductor Optical Properties
Analyze absorption coefficient and band edge effects in heavily doped semiconductors, including Burstein-Moss shift and band tailing. Use when designing optical filters, calculating absorption edges in doped materials, or analyzing how doping affects optical transitions and band structure.
testing1
doping-superlattice-tunability
Tune the electrical and optical properties of doping superlattices and optoelectronic devices by modulating carrier density through external stimuli such as light or electric fields. Use this skill when designing or analyzing tunable optoelectronic devices, adjusting effective bandgap, modifying carrier lifetimes, or controlling luminescence spectra in doping superlattice structures.
development1
drift-diffusion-modeling
Select and configure drift-diffusion models for numerical simulation of Perovskite Solar Cells (PSCs) and charge transport models. Use when choosing a mathematical modeling approach that balances computational cost with physical interpretability, or when addressing numerical stiffness issues in PSC simulations.
data-ai1
driftfusion-analysis-plotting
Analyze simulation solutions, calculate physical quantities, and generate plots. Use this skill when processing completed simulations, extracting currents/densities, or visualizing results.
research1
driftfusion-initialization
Initialize the Driftfusion simulation environment and create parameter objects. Use this skill when starting a new MATLAB session or setting up device properties for simulation.
development1
a-si-h-alloying-band-gap-tuning
Tune the optical band gap of hydrogenated amorphous silicon (a-Si:H) through alloying with germanium, carbon, oxygen, or nitrogen. Use this skill when designing solar cell layers that require specific band gap values, such as high-bandgap p-layers or optimized absorption i-layers, or when adjusting the spectral response of a-Si:H-based photovoltaic devices.
development1
cigs-thin-film-fabrication
Use this skill when fabricating Cu(InGa)Se2 thin-film solar cells. Covers substrate selection, deposition methods, and TCO layer deposition for complete device fabrication.
development1
amorphous-silicon-pin-cell-design
Design high-efficiency hydrogenated amorphous silicon (a-Si:H) solar cells using pin photodiode structure with optimized layer dimensions and PECVD deposition parameters. Use when designing a-Si:H solar cells, determining layer thickness for amorphous silicon devices, or configuring PECVD process parameters for a-Si:H deposition.
development1
assisted-tunneling-mechanisms
Calculate tunneling probabilities modified by phonon, trap, or photon assistance when standard tunneling is insufficient or specific energy exchange processes occur. Use this for indirect band-gap materials, defect-assisted transport, or optical field-enhanced tunneling.
testing1
auger-recombination-analysis
Calculate Auger recombination rates and carrier lifetimes in semiconductors. Use this skill when analyzing high carrier density scenarios (e.g., heavily doped materials, high injection conditions), narrow gap semiconductors (Eg < 0.35 eV), or when determining dominant recombination mechanisms at elevated carrier concentrations.
research1
bibliography-author-range-retrieval
Retrieve specific bibliographic entries from alphabetical sections of academic reference lists, particularly for physics and materials science literature organized by author surname
testing1
carrier-capture-cross-section-models
Calculate carrier capture cross-sections using gas-kinetic models and Coulomb-attractive center theory. Use this for determining recombination rates, carrier lifetimes, and analyzing temperature-dependent capture at defect centers.
data-ai1
carrier-induced-plastic-effects
Analyze how carrier injection or optical generation affects dislocation behavior and mechanical strength in semiconductors and crystalline materials. Use this skill when evaluating the electroplastic, photoplastic, or cathodoplastic effects in II-VI compounds, when carriers are being injected or optically generated in materials with dislocations, or when predicting changes in mechanical properties due to carrier density modifications.
tools1
CdS/CdTe Band Inversion Analysis
Analyze and model p-type inversion at CdS/CdTe interfaces under strong field quenching conditions. Use this skill when working with CdS/CdTe solar cell band diagrams, investigating leakage current prevention through band disconnection, or modeling interface dipole moment changes under photoconductivity effects.
data-ai1
cdte-heat-treatment-cdcl2-activation
Apply heat treatment and CdCl2 activation protocols to CdS/CdTe solar cell structures. Use this skill when performing post-deposition treatment to optimize cell efficiency through recrystallization and doping of the CdTe layer. Covers standard CdCl2 treatment, high-temperature annealing sequences, and alternative chemical treatments.
testing1
cigs-surface-chemistry-passivation
Use this skill when analyzing surface properties of Cu(InGa)Se2 films, optimizing cell performance through passivation treatments, or investigating Cu migration mechanisms and stability.
testing1
chebfun-fundamentals
Understand what chebfuns are, their philosophy, and how to construct them. Use when creating numerical representations of functions on intervals.
content-media1
chebfun-pde-solver-evaluation
Evaluates the viability of using Chebfun v5.7.0 with the pde15s solver for PSC (Photoelectrochemical) models. Use this skill when modeling PSC systems where stiffness parameters (lambda, nu) may be below 0.25 or when Shockley-Read-Hall (SRH) recombination nonlinearity is present.
data-ai1
chebyshev-approximation
Work with Chebyshev series and interpolants, including extracting coefficients, understanding convergence properties, and constructing fixed-length approximations. Use when analyzing the mathematical foundation of chebfun approximations or needing explicit polynomial representations.
testing1
chemical-stability-superlattices
Evaluates the long-term chemical stability of semiconductor superlattices by analyzing material type and lattice mismatch. Use this when assessing whether a superlattice structure will degrade through alloy formation or segregation, particularly for isovalent systems (e.g., GaAs-AlAs), mismatched systems (e.g., Si-Ge, GaAs-InAs), or low-mismatch systems.
development1
CIGS Bandgap Optimization
Analyze the relationship between Ga content, bandgap, and device performance in Cu(InGa)Se2 solar cells. Use when optimizing CIGS absorber composition, predicting Voc changes with bandgap engineering, or diagnosing efficiency losses in wide-bandgap CIGS devices.
development1
complex-root-finding
Find genuine complex roots of chebfuns using Chebfun ellipse filtering to avoid spurious roots, and control accuracy with recursion settings. Use when locating complex zeros of functions defined on real intervals.
tools1
copper-doping-optimization
Optimize copper doping density in CdS cover layers for efficient field quenching in CdS/CdTe solar cells. Use when designing or analyzing copper-doped CdS crystals for solar cell applications requiring field limitation.
testing1
crystal-lattice-defects-analysis
Classify and identify structural imperfections in crystalline solids and semiconductors. Use this skill when analyzing crystal defects, grain boundaries, dislocations, lattice mismatches, or point defects in materials science contexts.
testing1
current-decay-transient-simulation
Simulates and analyzes rapid current decay transients using a tanh voltage profile protocol. Use when modeling current decay scenarios or time-of-flight measurements where capturing fast timescale transients (initial current rise at very short times) is critical for accurate analysis.
development1
deep-level-center-modeling
Apply square well potential models to analyze and classify deep level centers (transition metal impurities, vacancies) with strong core potentials and localized wavefunctions when hydrogenic effective mass approximation is insufficient.
testing1
defect-charge-prediction
Predicts whether point defects (vacancies and interstitials) in ionic compounds and semiconductors act as donors or acceptors. Use this skill when analyzing defect chemistry, determining the charge character of vacancies or interstitials, or applying the 8-N rule to mixed bonding systems.
testing1
dielectric-properties-analysis
Analyze dielectric material properties including polarization, susceptibility, complex conductivity, and anisotropic tensor representations. Use this skill when modeling material response to electric fields, working with frequency-domain analysis of dielectrics, or handling anisotropic crystalline materials.
data-ai1
drift-diffusion-transport-physics
Model charge transport in perovskite solar cells using drift-diffusion equations. Apply conservation equations, flux equations, and Poisson's equation for perovskite, ETL, and HTL regions. Use when setting up the core physics model for PSC simulations.
data-ai1
driftfusion-device-structure
Define device layer structure, configure spatial and time meshes, and build device structures with interface grading. Use this skill when setting up the physical geometry and discretization of a simulation device.
development1
driftfusion-licensing-guidelines
Understand and comply with Driftfusion software licensing terms, including the open-source AGPL v3.0 frontend and proprietary MATLAB pdepe solver backend. Use when using, modifying, or distributing Driftfusion code.
development1