ShaneLogic/cigs-recombination-voc-analysis
.claude/skills/cigs-recombination-voc-analysis/SKILL.md
Determine recombination mechanisms and theoretical Voc limits for Cu(InGa)Se2/CdS solar cells using diode equation analysis, ideality factors, and barrier height measurements. Use this when fitting diode curves, determining voltage limitations, or investigating performance bottlenecks.
$ install --global
skillsauthnpx skillsauth add ShaneLogic/SolarLab cigs-recombination-voc-analysisInstall this skill globally with one command. Works with Claude Code, Cursor, and Windsurf.
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SKILL.md
- name:
- cigs-recombination-voc-analysis
- description:
- Determine recombination mechanisms and theoretical Voc limits for Cu(InGa)Se2/CdS solar cells using diode equation analysis, ideality factors, and barrier height measurements. Use this when fitting diode curves, determining voltage limitations, or investigating performance bottlenecks.
CIGS Recombination and Voc Analysis
When to Use
Apply this analysis when:
- Fitting current-voltage (J-V) curves
- Determining open-circuit voltage limitations
- Investigating why Voc is below theoretical limit
- Analyzing recombination mechanisms
- Evaluating device quality
Prerequisites
- Bandgap energy (Eg) of absorber
- Temperature (T) measurements
- J-V curve data
Diode Equation
J = Jo × [exp(e(V - RsJ) / AkT) - 1] + G(V - RsJ) - Jl
Where:
- Jo: Diode saturation current
- Rs: Series resistance
- G: Shunt conductance
- A: Ideality factor (key indicator of recombination mechanism)
- Jl: Photocurrent density
Open-Circuit Voltage Limits
Temperature Extrapolation
- As T → 0: Voc → Eg / e
- For ideality factor 1 < A < 2: Voc(T→0) = Eg/e
Barrier Height
- Measured barrier height: Φb
- For ideal devices: Φb = Eg
Recombination Mechanism Identification
Standard Case: SRH Recombination
- Dominant mechanism: Shockley-Read-Hall through deep trap states
- Location: Space-charge region of Cu(InGa)Se2 (where p ≈ n)
- Ideality factor: A = 1.5 ± 0.3
High Efficiency Devices
- Dominant mechanism: Bulk recombination
- Ideality factor: A ≈ 1.1–1.3
- Implication: Interface does not limit Voc
- Barrier height: Φb = Eg
Exception: Interfacial Recombination Dominant
Conditions causing interfacial dominance:
-
Wide-band-gap devices processed without Cu supply
- Results in lower Voc
- Barrier height: Φb < Eg
-
Diffusion barrier restricting Na diffusion from glass substrate
- Voc reduced by ~120 mV from Eg
- Na is critical for CIGS passivation
Analysis Workflow
- Measure J-V curves at multiple temperatures
- Extract ideality factor from temperature-dependent analysis
- Determine barrier height from activation energy
- Compare Φb to Eg: If Φb = Eg, bulk recombination dominates
- Interpret ideality factor:
- A ≈ 1.5: SRH in space-charge region
- A ≈ 1.1-1.3: Bulk recombination
- Check processing conditions: Cu supply, Na availability
- Identify limiting mechanism: Interface vs bulk
Decision Guide
| Ideality Factor | Mechanism | Implication | |-----------------|-----------|-------------| | 1.5 ± 0.3 | SRH in space-charge | Standard performance | | 1.1-1.3 | Bulk recombination | High efficiency possible | | > 2 | Interfacial recombination | Interface issues, check Cu/Na |
Expected Result
Determined recombination mechanism and theoretical Voc limit with identification of performance-limiting factors.
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