ShaneLogic/anode-adjacent-domain-analysis
.claude/skills/anode-adjacent-domain-analysis/SKILL.md
Analyze and characterize anode-adjacent high-field domains in CdS crystals and solar cells. Use this skill when investigating high-bias semiconductor behavior, junction leakage problems in CdS/CdTe/CIS solar cells, or when current-voltage characteristics show pre-breakdown stabilization. Triggers on mentions of domain formation, singular points in field analysis, or solar cell junction optimization.
$ install --global
skillsauthnpx skillsauth add ShaneLogic/SolarLab anode-adjacent-domain-analysisInstall this skill globally with one command. Works with Claude Code, Cursor, and Windsurf.
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SKILL.md
- name:
- anode-adjacent-domain-analysis
- description:
- Analyze and characterize anode-adjacent high-field domains in CdS crystals and solar cells. Use this skill when investigating high-bias semiconductor behavior, junction leakage problems in CdS/CdTe/CIS solar cells, or when current-voltage characteristics show pre-breakdown stabilization. Triggers on mentions of domain formation, singular points in field analysis, or solar cell junction optimization.
Anode-Adjacent High-Field Domain Analysis
When to Use
Apply this skill when:
- Analyzing CdS crystals under high bias conditions
- Investigating junction leakage in CdS/CdTe/CIS solar cells
- Current-voltage characteristics show unexpected stabilization in pre-breakdown range
- Field excitation competes with field quenching at high fields
- Transition from cathode-adjacent to anode-adjacent domain behavior
Prerequisites
- High field range where field excitation competes with field quenching
- Domain fills entire crystal
- Transition from cathode-adjacent domain already occurred
Analysis Procedure
Step 1: Extend Neutrality Curve Analysis
Extend the neutrality curve in the field-of-direction to higher fields. Identify where the n1(F) curve levels off or increases, indicating field excitation competing with quenching.
Step 2: Locate Singular Points
- Identify the third singular point (III) at the intersection of n1(F) and n2(F)
- Confirm the solution curve can no longer approach singular point I (bulk)
- Verify the curve must connect points II and III
Step 3: Characterize Domain Formation
Observe domain behavior:
- Domain starts at the anode
- Domain expands toward the cathode
- Bulk side of cathode-adjacent domain shrinks
- Only high-field horizontal branch at singular point II remains
Step 4: Determine Field Strength
Calculate field strength from the slope of domain width vs bias:
- Typical anode-adjacent domain: ~135 kV/cm
- Compare with cathode-adjacent domain: ~80 kV/cm
Step 5: Evaluate Stabilization Effects
Verify current stabilization:
- Current-voltage characteristic stabilizes in pre-breakdown range
- Current remains lower than expected
- Run-away current prevented (minimum energy principle)
Solar Cell Application
For CdS/CdTe/CIS solar cells:
- Verify domain limits field at junction interface below 80 kV/cm
- Confirm junction leakage elimination
- Measure open circuit voltage improvement (potential doubling)
Key Variables
| Variable | Type | Description | |----------|------|-------------| | singular_point_III | Abstract Point | Intersection point for anode-adjacent domain | | leakage_current | Current | Undesired current at junction | | domain_field_strength | Field | Typically 135 kV/cm for anode-adjacent |
Expected Results
- Anode-adjacent domain characterized at ~135 kV/cm
- Stabilized solar cell junction with reduced leakage
- Improved open circuit voltage performance
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