ShaneLogic/cigs-quantum-efficiency-analysis
.claude/skills/cigs-quantum-efficiency-analysis/SKILL.md
Calculate external and internal quantum efficiency for Cu(InGa)Se2 solar cells and analyze optical and collection losses (shading, reflection, absorption, collection efficiency) to determine short-circuit current limitations. Use this when analyzing device performance, calculating Jsc, or investigating current losses.
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skillsauthnpx skillsauth add ShaneLogic/SolarLab cigs-quantum-efficiency-analysisInstall this skill globally with one command. Works with Claude Code, Cursor, and Windsurf.
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SKILL.md
- name:
- cigs-quantum-efficiency-analysis
- description:
- Calculate external and internal quantum efficiency for Cu(InGa)Se2 solar cells and analyze optical and collection losses (shading, reflection, absorption, collection efficiency) to determine short-circuit current limitations. Use this when analyzing device performance, calculating Jsc, or investigating current losses.
CIGS Quantum Efficiency Analysis
When to Use
Apply this analysis when:
- Analyzing Cu(InGa)Se2 solar cell performance
- Calculating short-circuit current (Jsc)
- Investigating current loss mechanisms
- Determining collection efficiency
- Measuring spectral response
Prerequisites
- Device structure (CdS/ZnO/CIGS)
- Bandgap data for Cu(InGa)Se2
- Measurement capability for QE vs wavelength
Core Formulas
External Quantum Efficiency (QEext)
QEext(λ,V) = [1 - R(λ)] × [1 - AZnO(λ)] × [1 - ACdS(λ)] × QEint(λ,V)
Where:
- R: Total reflection including grid shading
- AZnO: Absorption in ZnO layer
- ACdS: Absorption in CdS layer
- QEint: Internal quantum efficiency
Internal Quantum Efficiency (QEint)
QEint(λ,V) = 1 - exp[-α(λ) × (W(V) + Ldiff)]
Where:
- α: Cu(InGa)Se2 absorption coefficient
- W: Space-charge width in Cu(InGa)Se2
- Ldiff: Minority-carrier diffusion length
- Assumption: All carriers generated in space-charge region are collected at 0V
Loss Mechanism Analysis
Identify and quantify current losses reducing Jsc:
| Loss Type | Typical Value | Description | |-----------|---------------|-------------| | 1. Grid Shading | ~1.7 mA/cm² (4% area) | Front contact blocking light | | 2. Front Reflection | ~3.8 mA/cm² | Surface reflection losses | | 3. ZnO Absorption | ~1.8 mA/cm² | Free carrier (>900nm) and band-band (<400nm) | | 4. CdS Absorption | ~0.8 mA/cm² | Increases below 2.42 eV | | 5. Incomplete Generation | ~1.9 mA/cm² | Near bandgap in Cu(InGa)Se2 | | 6. Incomplete Collection | ~0.4 mA/cm² | Recombination in Cu(InGa)Se2 |
Voltage Bias Effects
Reverse Bias (-1V)
- Increases space charge layer width
- Increases effective collection length
- Improves QE at longer wavelengths
Forward Bias
- Reduces collection length
- Affects Fill Factor (FF) and Voc
- Simulates operating conditions
Analysis Workflow
- Measure QEext vs wavelength
- Measure reflection spectrum
- Calculate QEint using known layer thicknesses and absorption coefficients
- Identify dominant loss mechanisms from the QE curve shape
- Quantify current losses for each mechanism
- Evaluate voltage bias dependence to assess collection efficiency
Expected Result
Calculated Jsc and QE curve identifying optical and collection losses with quantitative breakdown of each loss mechanism.
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