ShaneLogic/chalcopyrite-absorber-selection
.claude/skills/chalcopyrite-absorber-selection/SKILL.md
Select appropriate wide-band-gap chalcopyrite absorber materials for thin-film solar cells based on band-gap requirements. Use when designing single-junction or tandem solar cells, comparing Cu-based and Ag-based chalcopyrite compounds, or determining material suitability for specific Eg values.
$ install --global
skillsauthnpx skillsauth add ShaneLogic/SolarLab chalcopyrite-absorber-selectionInstall this skill globally with one command. Works with Claude Code, Cursor, and Windsurf.
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SKILL.md
- name:
- chalcopyrite-absorber-selection
- description:
- Select appropriate wide-band-gap chalcopyrite absorber materials for thin-film solar cells based on band-gap requirements. Use when designing single-junction or tandem solar cells, comparing Cu-based and Ag-based chalcopyrite compounds, or determining material suitability for specific Eg values.
Chalcopyrite Absorber Material Selection
When to Use
Use this skill when:
- Selecting absorber material for specific band-gap requirements
- Designing single-junction or tandem thin-film solar cells
- Comparing properties of different chalcopyrite compositions
- Determining processing requirements for specific materials
Material Properties Lookup
CuGaSe2
- Band-gap: Eg = 1.68 eV
- Application: Suited for tandem structures
CuInS2
- Band-gap: Eg = 1.53 eV
- Application: Nearly optimum for single-junction solar cells
- Processing: Requires Cu-rich deposition, then etching away excess Cu (CuxS second phase) before CdS deposition
Cu(InAl)Se2
- Band-gap: Eg = 1.15 eV
- Achieved efficiency: 17%
CuAlSe2
- Band-gap: Eg = 2.7 eV
(AgCu)(InGa)Se2
- Feature: Ag replacement of Cu enables band-gap increase while lowering alloy melting temperature
- Performance: Relatively high Voc reported
Selection Procedure
-
Identify required band-gap (Eg) based on application:
- Tandem structure: Target Eg ≈ 1.68 eV → CuGaSe2
- Single-junction optimum: Target Eg ≈ 1.53 eV → CuInS2
- Intermediate band-gap: Target Eg ≈ 1.15 eV → Cu(InAl)Se2
- Wide band-gap: Target Eg ≈ 2.7 eV → CuAlSe2
-
Consider processing constraints:
- CuInS2 requires additional etching step
- (AgCu)(InGa)Se2 offers lower melting temperature
-
Verify efficiency targets against reference data
Variables
- Eg: Band-gap energy in electron volts (eV) - primary selection criterion
Constraints
- Specific efficiencies vary by deposition method and reference sources
- Always verify current efficiency records as technology advances
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