ShaneLogic/cdte-layer-properties
.claude/skills/cdte-layer-properties/SKILL.md
Use when characterizing, modeling, or analyzing CdTe absorber layer properties in thin-film solar cells (CdS/CdTe heterojunctions). Provides physical parameters including electrical conductivity, carrier mobilities, effective masses, bandgap, dielectric constants, and layer specifications for device modeling and characterization tasks.
$ install --global
skillsauthnpx skillsauth add ShaneLogic/SolarLab cdte-layer-propertiesInstall this skill globally with one command. Works with Claude Code, Cursor, and Windsurf.
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SKILL.md
- name:
- cdte-layer-properties
- description:
- Use when characterizing, modeling, or analyzing CdTe absorber layer properties in thin-film solar cells (CdS/CdTe heterojunctions). Provides physical parameters including electrical conductivity, carrier mobilities, effective masses, bandgap, dielectric constants, and layer specifications for device modeling and characterization tasks.
CdTe Layer Physical Properties
When to Use
Use this skill when:
- Characterizing CdTe absorber layers in CdS/CdTe solar cells
- Modeling device performance requiring CdTe material parameters
- Analyzing thin-film properties of deposited CdTe layers
- Setting up simulations with CdTe physical constants
- Calculating carrier transport or optical properties
Prerequisites
- CdTe layer must be deposited (or being modeled)
- Properties may vary with deposition and treatment methods
- Values provided are for typical processed CdTe
Physical Parameters
Electrical Properties
| Property | Value | Notes | |----------|-------|-------| | Conductivity type | p-type | Native doping | | Hole density | 10¹⁴ – 10¹⁵ cm⁻³ | Typical range | | Hole mobility (μh) | 50 – 80 cm²/Vs | Hall mobility | | Electron mobility (μe) | 500 – 1000 cm²/Vs | Hall mobility |
Effective Masses
| Carrier | Effective Mass | |---------|---------------| | Electrons | mn = 0.09 m₀ | | Holes | mp = 0.35 m₀ |
Bandgap Properties
- Bandgap at 300K: Eg = 1.5 eV
- Temperature coefficient: Varies (see Birkmire and McCandless 1992)
Dielectric Properties
| Property | Value | |----------|-------| | Static dielectric constant (εs) | 10 | | High frequency dielectric constant (ε∞) | 7.1 |
Device Layer Specifications
- Typical thickness range: 2 – 8 μm
Common Deposition Methods
- Close space sublimation (most typical for devices)
- Vacuum evaporation
- Other methods applicable (similar to CdS deposition)
Usage Notes
- Actual properties depend on deposition conditions and post-deposition treatments
- Reference: Birkmire and McCandless (1992)
- Thermal expansion coefficient values available in source literature
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