a5c-ai/plasma-etch-controller

Plasma Etch Controller

Purpose

The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.

Capabilities

• Etch chemistry selection
• Anisotropy and selectivity optimization
• Endpoint detection
• Profile and sidewall angle control
• Loading effect compensation
• Plasma damage assessment

Usage Guidelines

Plasma Etch Process

1. Chemistry Selection

   • Match chemistry to material
   • Consider selectivity requirements
   • Address sidewall passivation

2. Profile Control

   • Optimize ion energy
   • Balance chemical and physical
   • Control sidewall angle

3. Endpoint Detection

   • Use OES for species monitoring
   • Apply interferometry
   • Implement time-based backup

Process Integration

• Nanolithography Process Development
• Nanodevice Integration Process Flow

Input Schema

{
  "material": "string",
  "mask_type": "string",
  "target_depth": "number (nm)",
  "feature_cd": "number (nm)",
  "selectivity_requirements": {
    "to_mask": "number",
    "to_underlayer": "number"
  }
}

Output Schema

{
  "etch_recipe": {
    "gases": [{"gas": "string", "flow": "number (sccm)"}],
    "pressure": "number (mTorr)",
    "rf_power": "number (W)",
    "bias_power": "number (W)"
  },
  "etch_rate": "number (nm/min)",
  "selectivity": {
    "to_mask": "number",
    "to_underlayer": "number"
  },
  "sidewall_angle": "number (degrees)",
  "uniformity": "number (%)"
}